TW015Z120C,S1F

TW015Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 1

Data sheet

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Toshiba Electronic Devices and Storage Corporation
Describe G3 1200V SIC-MOSFET TO-247-4L 1
Encapsulation -
Package Tube
ROHS status Yes
Price USD $61.3300
Data sheet

定价

Quantity Unit price
1 $61.3300
30 $53.8900
120 $50.1800

Specification

TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 50A, 18V
Power Dissipation (Max)431W (Tc)
Vgs(th) (Max) @ Id5V @ 11.7mA
Supplier Device PackageTO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 800 V

Transport

Shipping fee


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Basic shipping charges (package ≤0.5kg or corresponding volume) depend on time zone and country.


Mailing method


Currently, our products are shipped via DHL, FedEx, SF and UPS.


Delivery time


Once the goods are shipped, the estimated delivery time depends on the shipping method you choose:

FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price
Price
  • In stock: 98

定价

Quantity Unit price
1 $61.3300
30 $53.8900
120 $50.1800