TP65H050G4YS

TP65H050G4YS

650 V 35 A GAN FET HIGH VOLTAGE

Data sheet

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Transphorm
Describe 650 V 35 A GAN FET HIGH VOLTAGE
Encapsulation -
Package Tube
ROHS status Yes
Price USD $9.9100
Data sheet

定价

Quantity Unit price
1 $14.3600
10 $12.6500
450 $9.9100

Specification

TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 22A, 10V
Power Dissipation (Max)132W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTO-247-4L
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 400 V

Transport

Shipping fee


Shipping starts at $40, but can be over $40 for some countries. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
Basic shipping charges (package ≤0.5kg or corresponding volume) depend on time zone and country.


Mailing method


Currently, our products are shipped via DHL, FedEx, SF and UPS.


Delivery time


Once the goods are shipped, the estimated delivery time depends on the shipping method you choose:

FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price
Price
  • In stock: 402

定价

Quantity Unit price
1 $14.3600
10 $12.6500
450 $9.9100