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QSD12HCS65U
SiC Homogeneous Schottky Barrier
Property Bar
Number
SC-QSD12H-ACBDW9
manufacturer:
Quest Semi
MPN#
SC-QSD12H-ACBDW9
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Technology
    SiC (Silicon Carbide) Schottky
    Voltage Rating - DC
    650 V
    Configuration
    No Recovery Time > 500mA (Io)
    Reverse Recovery Time (trr)
    0 ns
    Operating Temperature
    -55°C ~ 175°C
    Package / Case
    TO-247-3
    Supplier Device Package
    TO-247-3L
    Current - Reverse Leakage @ Vr
    30 µA @ 650 V
    Voltage - Forward (Vf) (Max) @ If
    1.6 V @ 12 A
Substitute Parts
    1N4001-T
    Diodes Incorporated
    DIODE STANDARD 50V 1A DO41
    quantity 1
    price N/A
    1N4002-T
    Diodes Incorporated
    DIODE STANDARD 100V 1A DO41
    quantity 1
    price N/A
    1N4003-T
    Diodes Incorporated
    DIODE STANDARD 200V 1A DO41
    quantity 1
    price N/A
    1N4004-T
    Diodes Incorporated
    DIODE STANDARD 400V 1A DO41
    quantity 1
    price N/A
    1N4005-T
    Diodes Incorporated
    DIODE STANDARD 600V 1A DO41
    quantity 1
    price N/A
inventory 6520
minimum
50
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
50
3.99
199.5
100
3.8
380
500
3.5
1750
1000
3.25
3250
2000
3
6000
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