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IV2Q12080T4Z
GEN2, SIC MOSFET, 1200V 80MOHM,
Property Bar
Number
SC-IV2Q12-9F3QDN
manufacturer:
Inventchip
MPN#
SC-IV2Q12-9F3QDN
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Varistor Voltage (Typ)
    1200 V
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-4
    Power Dissipation (Max)
    250W (Tc)
    Current - Continuous Drain (Id) @ 25°C
    41A (Tc)
    Rds On (Max) @ Id, Vgs
    104mOhm @ 10A, 18V
    Vgs(th) (Max) @ Id
    4.5V @ 5mA
    Gate Charge (Qg) (Max) @ Vgs
    53 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds
    1214 pF @ 800 V
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inventory 1660
minimum
1
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
8.19
8.19
10
5.58
55.8
100
4.1
410
500
3.54
1770
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