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IV2Q06060T4Z
GEN 2, SIC MOSFET, 650V 60MOHM,
Property Bar
Number
SC-IV2Q06-9L8RKO
manufacturer:
Inventchip
MPN#
SC-IV2Q06-9L8RKO
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-4
    Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
    Vgs(th) (Max) @ Id
    4.5V @ 5mA
    Rds On (Max) @ Id, Vgs
    53mOhm @ 15A, 18V
    Gate Charge (Qg) (Max) @ Vgs
    64 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds
    1218 pF @ 600 V
    Power Dissipation (Max)
    174W (Tc)
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inventory 1660
minimum
1
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
8.99
8.99
10
6.15
61.5
100
4.55
455
500
4
2000
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