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IV2Q06060D7Z
GEN 2, SIC MOSFET, 650V 60MOHM,
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Number
SC-IV2Q06-QXC1PI
manufacturer:
Inventchip
MPN#
SC-IV2Q06-QXC1PI
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Vgs (Max)
    +20V, -5V
    Supplier Device Package
    TO-263-7
    Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
    Vgs(th) (Max) @ Id
    4.5V @ 7.5mA
    Gate Charge (Qg) (Max) @ Vgs
    94.7 nC @ 18 V
    Power Dissipation (Max)
    174W (Tc)
    Rds On (Max) @ Id, Vgs
    78mOhm @ 15A, 18V
    Input Capacitance (Ciss) (Max) @ Vds
    2000 pF @ 400 V
Document
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inventory 1660
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1
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Shipment within 48 hours
price
quantity
unit price
price
1
8.71
8.71
10
5.95
59.5
100
4.39
439
500
3.84
1920
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