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IV2Q06040L1
GEN 2, SIC MOSFET, 650V 40MOHM,
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Number
SC-IV2Q06-QJ8ZLV
manufacturer:
MPN#
SC-IV2Q06-QJ8ZLV
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Vgs (Max)
    +20V, -5V
    Supplier Device Package
    TOLL
    Current - Continuous Drain (Id) @ 25°C
    63.5A (Tc)
    Rds On (Max) @ Id, Vgs
    53mOhm @ 20A, 18V
    Vgs(th) (Max) @ Id
    4.5V @ 7.5mA
    Gate Charge (Qg) (Max) @ Vgs
    94.7 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds
    2000 pF @ 600 V
    Power Dissipation (Max)
    249W (Tc)
Document
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inventory 1660
minimum
1
package
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delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
10.27
10.27
10
7.08
70.8
100
5.27
527
500
4.76
2380
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