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IV2Q06025T4Z
GEN 2, SIC MOSFET, 650V 25MOHM,
Property Bar
Number
SC-IV2Q06-YZR0N5
manufacturer:
Inventchip
MPN#
SC-IV2Q06-YZR0N5
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-4
    Power Dissipation (Max)
    454W (Tc)
    Vgs(th) (Max) @ Id
    4.5V @ 12mA
    Current - Continuous Drain (Id) @ 25°C
    99A (Tc)
    Rds On (Max) @ Id, Vgs
    33mOhm @ 40A, 18V
    Gate Charge (Qg) (Max) @ Vgs
    125 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds
    3090 pF @ 600 V
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inventory 1660
minimum
1
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
12.48
12.48
10
8.7
87
100
6.56
656
500
6.15
3075
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