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IV1Q12750O3
SIC MOSFET, 1200V 750MOHM, TO220
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Number
SC-IV1Q12-SLX1B6
manufacturer:
MPN#
SC-IV1Q12-SLX1B6
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    20V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Varistor Voltage (Typ)
    1200 V
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-220-3
    Rds On (Max) @ Id, Vgs
    900mOhm @ 1.5A, 20V
    Gate Charge (Qg) (Max) @ Vgs
    15.8 nC @ 20 V
    Input Capacitance (Ciss) (Max) @ Vds
    260 pF @ 800 V
    Current - Continuous Drain (Id) @ 25°C
    6.4A (Tc)
    Power Dissipation (Max)
    66.9W (Tc)
Document
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inventory 1600
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100
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Shipment within 48 hours
price
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price
100
2.37
237
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