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IV1Q12160T4
SIC MOSFET, 1200V 160MOHM, TO-24
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Number
SC-IV1Q12-1K2SU8
manufacturer:
Inventchip
MPN#
SC-IV1Q12-1K2SU8
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    20V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Varistor Voltage (Typ)
    1200 V
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-4
    Power Dissipation (Max)
    138W (Tc)
    Current - Continuous Drain (Id) @ 25°C
    20A (Tc)
    Gate Charge (Qg) (Max) @ Vgs
    43 nC @ 20 V
    Rds On (Max) @ Id, Vgs
    195mOhm @ 10A, 20V
    Input Capacitance (Ciss) (Max) @ Vds
    885 pF @ 800 V
    Vgs(th) (Max) @ Id
    2.9V @ 1.9mA
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inventory 1600
minimum
120
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
120
3.56
427.2
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