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IV1Q12080T3Z
SIC MOSFET, 1200V 80MOHM, TO247-
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Number
SC-IV1Q12-4XC51J
manufacturer:
Inventchip
MPN#
SC-IV1Q12-4XC51J
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    20V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Varistor Voltage (Typ)
    1200 V
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-3
    Power Dissipation (Max)
    300W (Tc)
    Current - Continuous Drain (Id) @ 25°C
    42A (Tc)
    Rds On (Max) @ Id, Vgs
    100mOhm @ 10A, 20V
    Input Capacitance (Ciss) (Max) @ Vds
    1680 pF @ 800 V
    Gate Charge (Qg) (Max) @ Vgs
    76 nC @ 20 V
    Vgs(th) (Max) @ Id
    5V @ 3.12mA
Document
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120
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120
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