
IV1Q12080T3
SIC MOSFET, 1200V 80MOHM, TO247-
Property Bar
Number
SC-IV1Q12-UJLQSG
manufacturer:
MPN#
SC-IV1Q12-UJLQSG
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
Part Status
Active
No Load Power Consumption
-
Package / Case
Through Hole
Voltage - Output
20V
FET Type
N-Channel
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiCFET (Silicon Carbide)
Varistor Voltage (Typ)
1200 V
Vgs (Max)
+20V, -5V
Package / Case
TO-247-3
Power Dissipation (Max)
300W (Tc)
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 20V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 20 V
Vgs(th) (Max) @ Id
5V @ 3.8mA
Substitute Parts
inventory 1600
minimum
120
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
120
4.16
499.2
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