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IV1Q06060T3G
SIC MOSFET, 650V 60MOHM, TO247-3
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Number
SC-IV1Q06-0H5WVM
manufacturer:
Inventchip
MPN#
SC-IV1Q06-0H5WVM
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    20V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Vgs (Max)
    +20V, -5V
    Package / Case
    TO-247-3
    Current - Continuous Drain (Id) @ 25°C
    50A (Tc)
    Vgs(th) (Max) @ Id
    5V @ 3.9mA
    Power Dissipation (Max)
    227W (Tc)
    Rds On (Max) @ Id, Vgs
    80mOhm @ 15A, 20V
    Gate Charge (Qg) (Max) @ Vgs
    69.5 nC @ 20 V
    Input Capacitance (Ciss) (Max) @ Vds
    1640 pF @ 800 V
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inventory 1600
minimum
120
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
120
4.88
585.6
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