Loading...

GPI65007DF56
GaNFET N-CH 650V 7A DFN5x6
PDF
Property Bar
Number
SC-GPI650-HWIGAT
manufacturer:
GaNPower
MPN#
SC-GPI650-HWIGAT
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Surface Mount
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Voltage - Output
    6V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Current - Output (Max)
    7A
    Technology
    GaNFET (Gallium Nitride)
    Vgs (Max)
    +7.5V, -12V
    Gate Charge (Qg) (Max) @ Vgs
    2.1 nC @ 6 V
    Vgs(th) (Max) @ Id
    1.5V @ 3.5mA
    Input Capacitance (Ciss) (Max) @ Vds
    76.1 pF @ 400 V
Document
Substitute Parts
    IRF510
    Vishay Siliconix
    MOSFET N-CH 100V 5.6A TO220AB
    quantity 1
    price N/A
    IRF9510
    Vishay Siliconix
    MOSFET P-CH 100V 4A TO220AB
    quantity 1
    price N/A
    IRFD9220
    Vishay Siliconix
    MOSFET P-CH 200V 560MA 4DIP
    quantity 1
    price N/A
    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
    quantity 1
    price N/A
    IRFD110
    Vishay Siliconix
    MOSFET N-CH 100V 1A 4DIP
    quantity 1
    price N/A
inventory 1635
minimum
1
package
Tape & Reel (TR)
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
3.5
3.5
Please send an inquiry form, we will reply immediately
Contact Name
email
corporate name
country
quantity
content
Delivery & Payment

(0 Items)

it was empty.