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GP3T080A120H
GEN3 1200V, 80M SIC MOSFET, TO-2
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Number
SC-GP3T08-U38PMJ
manufacturer:
SemiQ
MPN#
SC-GP3T08-U38PMJ
RoHS Compliance:
Full
Sample:
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specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    18V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Varistor Voltage (Typ)
    1200 V
    Current - Continuous Drain (Id) @ 25°C
    32A (Tc)
    Package / Case
    TO-247-4
    Vgs (Max)
    +22V, -8V
    Rds On (Max) @ Id, Vgs
    100mOhm @ 10A, 18V
    Vgs(th) (Max) @ Id
    4V @ 5mA
    Technology
    SiC (Silicon Carbide Junction Transistor)
    Power Dissipation (Max)
    147W (Tc)
    Gate Charge (Qg) (Max) @ Vgs
    53 nC @ 18 V
    Input Capacitance (Ciss) (Max) @ Vds
    1351 pF @ 1000 V
Document
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inventory 1610
minimum
1
package
Tube
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Shipment within 48 hours
price
quantity
unit price
price
1
5.73
5.73
10
3.83
38.3
100
2.75
275
500
2.29
1145
1000
2.2
2200
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