Loading...

GP2T080A120H
SIC MOSFET 1200V 80M TO-247-4L
PDF
Property Bar
Number
SC-GP2T08-X0KQ6M
manufacturer:
SemiQ
MPN#
SC-GP2T08-X0KQ6M
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Through Hole
    Voltage - Output
    20V
    FET Type
    N-Channel
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Technology
    SiCFET (Silicon Carbide)
    Varistor Voltage (Typ)
    1200 V
    Vgs(th) (Max) @ Id
    4V @ 10mA
    Package / Case
    TO-247-4
    Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
    Power Dissipation (Max)
    188W (Tc)
    Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
    Vgs (Max)
    +25V, -10V
    Gate Charge (Qg) (Max) @ Vgs
    61 nC @ 20 V
    Input Capacitance (Ciss) (Max) @ Vds
    1377 pF @ 1000 V
Document
Substitute Parts
    IRF510
    Vishay Siliconix
    MOSFET N-CH 100V 5.6A TO220AB
    quantity 1
    price N/A
    IRF9510
    Vishay Siliconix
    MOSFET P-CH 100V 4A TO220AB
    quantity 1
    price N/A
    IRFD9220
    Vishay Siliconix
    MOSFET P-CH 200V 560MA 4DIP
    quantity 1
    price N/A
    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
    quantity 1
    price N/A
    IRFD110
    Vishay Siliconix
    MOSFET N-CH 100V 1A 4DIP
    quantity 1
    price N/A
inventory 1600
minimum
1
package
Tube
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
7.66
7.66
30
4.57
137.1
120
4.22
506.4
510
3.8
1938
Please send an inquiry form, we will reply immediately
Contact Name
email
corporate name
country
quantity
content
Delivery & Payment

(0 Items)

it was empty.