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CGD65B240SH2
650V GAN HEMT, 240MOHM, DFN5X6.
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Number
SC-CGD65B-29S8O0
manufacturer:
Cambridge GaN Devices
MPN#
SC-CGD65B-29S8O0
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Surface Mount
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Voltage - Output
    12V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Package / Case
    8-PowerVDFN
    Current - Output (Max)
    7A
    Supplier Device Package
    8-DFN (5x6)
    Technology
    GaNFET (Gallium Nitride)
    Vgs(th) (Max) @ Id
    4.2V @ 2.3mA
    Rds On (Max) @ Id, Vgs
    336mOhm @ 500mA, 12V
    Vgs (Max)
    +20V, -1V
    Gate Charge (Qg) (Max) @ Vgs
    1.2 nC @ 12 V
Substitute Parts
    IRF510
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    quantity 1
    price N/A
    IRF9510
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    quantity 1
    price N/A
    IRFD9220
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    MOSFET P-CH 200V 560MA 4DIP
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    IRF840
    Vishay Siliconix
    MOSFET N-CH 500V 8A TO220AB
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    IRFD110
    Vishay Siliconix
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    quantity 1
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inventory 6255
minimum
1
package
Cut Tape (CT) & Digi-Reel®
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
5.39
5.39
10
3.59
35.9
100
2.57
257
500
2.48
1240
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