CGD65B200S2-T13

CGD65B200S2-T13

650V GAN HEMT, 200MOHM, DFN5X6.

Data sheet

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Describe 650V GAN HEMT, 200MOHM, DFN5X6.
Encapsulation -
Package Tape & Reel (TR)
ROHS status Yes
Price USD $4.5500
Data sheet

定价

Quantity Unit price
1 $4.5500
10 $3.8200
100 $3.0900
500 $2.7500
1000 $2.3500
2000 $2.2100
5000 $2.1300

Specification

TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V

Transport

Shipping fee


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Basic shipping charges (package ≤0.5kg or corresponding volume) depend on time zone and country.


Mailing method


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Delivery time


Once the goods are shipped, the estimated delivery time depends on the shipping method you choose:

FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price $ 2.13
Price $ 10650
  • In stock: 4355

定价

Quantity Unit price
1 $4.5500
10 $3.8200
100 $3.0900
500 $2.7500
1000 $2.3500
2000 $2.2100
5000 $2.1300