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CGD65B130SH2
650V GAN HEMT, 130MOHM, DFN5X6.
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Number
SC-CGD65B-2T6SR1
manufacturer:
Cambridge GaN Devices
MPN#
SC-CGD65B-2T6SR1
RoHS Compliance:
Full
Sample:
Get Free Sample
specifications
    Part Status
    Active
    No Load Power Consumption
    -
    Package / Case
    Surface Mount
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Voltage - Output
    12V
    FET Type
    N-Channel
    Voltage Rating - DC
    650 V
    Package / Case
    8-PowerVDFN
    Current - Output (Max)
    12A
    Supplier Device Package
    8-DFN (5x6)
    Technology
    GaNFET (Gallium Nitride)
    Rds On (Max) @ Id, Vgs
    182mOhm @ 900mA, 12V
    Vgs(th) (Max) @ Id
    4.2V @ 4.2mA
    Vgs (Max)
    +20V, -1V
    Gate Charge (Qg) (Max) @ Vgs
    1.9 nC @ 12 V
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inventory 6549
minimum
1
package
Cut Tape (CT) & Digi-Reel®
delivery time
Shipment within 48 hours
price
quantity
unit price
price
1
7.1
7.1
10
4.8
48
100
3.58
358
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