CGD65B130S2-T13

CGD65B130S2-T13

650V GAN HEMT, 130MOHM, DFN5X6.

Data sheet

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Describe 650V GAN HEMT, 130MOHM, DFN5X6.
Encapsulation -
Package Tape & Reel (TR)
ROHS status Yes
Price USD $6.4200
Data sheet

定价

Quantity Unit price
1 $6.4200
10 $5.3900
100 $4.3600
500 $3.8800
1000 $3.3200
2000 $3.1300
5000 $3.0000

Specification

TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V

Transport

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Mailing method


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Delivery time


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FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price
Price
  • In stock: 4885

定价

Quantity Unit price
1 $6.4200
10 $5.3900
100 $4.3600
500 $3.8800
1000 $3.3200
2000 $3.1300
5000 $3.0000