CGD65A130S2-T13

CGD65A130S2-T13

650V GAN HEMT, 130MOHM, DFN8X8.

Data sheet

  • -

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Describe 650V GAN HEMT, 130MOHM, DFN8X8.
Encapsulation -
Package Tape & Reel (TR)
ROHS status Yes
Price USD $3.3200
Data sheet -

定价

Quantity Unit price
1 $6.2500
10 $5.3600
100 $4.4600
500 $3.9400
1000 $3.5500
3500 $3.3200

Specification

TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V

Transport

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Mailing method


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Delivery time


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FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price
Price
  • In stock: 3352

定价

Quantity Unit price
1 $6.2500
10 $5.3600
100 $4.4600
500 $3.9400
1000 $3.5500
3500 $3.3200