CGD65A055S2-T07

CGD65A055S2-T07

650V GAN HEMT, 55MOHM, DFN8X8. W

Data sheet

Attribute

Product Categories Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Describe 650V GAN HEMT, 55MOHM, DFN8X8. W
Encapsulation -
Package Tape & Reel (TR)
ROHS status Yes
Price USD $9.5400
Data sheet

定价

Quantity Unit price
1 $15.0600
10 $13.2700
100 $11.4700
500 $10.4000
1000 $9.5400

Specification

TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 10mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 12 V

Transport

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Mailing method


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Delivery time


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FedEx International, 5-7 business days.

The following are logistics times for some common countries.

transport

Unit price
Price
  • In stock: 737

定价

Quantity Unit price
1 $15.0600
10 $13.2700
100 $11.4700
500 $10.4000
1000 $9.5400